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MRF5S9150HR3 MRF5S9150HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for N-CDMA base station applications with frequencies from 869
to 960 MHz. Suitable for multicarrier amplifier applications.
?
Typical Single-Carrier N-CDMA Performance @ 880 MHz: VDD
= 28 Volts,
IDQ
= 1500 mA, P
out
= 33 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain ? 19.7 dB
Drain Efficiency ? 28.4%
ACPR @ 750 kHz Offset ? -46.8 dBc in 30 kHz Bandwidth
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 150 Watts CW
Output Power
Features
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Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
Lower Thermal Resistance Package
?
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 150 W CW
Case Temperature 76°C, 33 W CW
RθJC
0.34
0.34
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF5S9150H
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
880 MHz, 33 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
MRF5S9150HR3
MRF5S9150HSR3
CASE 465-06, STYLE 1
NI-780
MRF5S9150HR3
CASE 465A-06, STYLE 1
NI-780S
MRF5S9150HSR3
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Freescale Semiconductor, Inc., 2006. All rights reserved.
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